Course Description
MOS capacitor and transistor regions of operation. Depletion and enhancement mode MOSFETs. MOSFET scaling, short and narrow channel effects. MOSFETs with ion-implanted channels. High field effects in MOSFETs with emphasis on recent advances in design of hit carrier suppressed structures. Small and large signal MOSFET models. State of the art in MOS process integration.
Fall 2025
Instructors
Meeting Patterns
Classes Start:
August 18, 2025
Classes End:
December 2, 2025
Location:
01228 Engineering Building 2
Class Days:
T H
Class Start Time:
8:30am
Class End Time:
9:45am
Class Type:
Lecture
Credits:
3.00
Restrictions:
Prerequisite: ECE graduate students and ECE undergrads with a 3.5 or higher GPA
