Course Description
This course provides students with an in-depth knowledge of power devices built from wide bandgap semiconductors: the design of high breakdown voltages, the physics of unique power rectifier structures suitable for SiC material, the operating principles for unique SiC power MOSFETs, and GaN HEMT devices, the development of bipolar power devices from SiC to achieve ultra-high voltage performance and the performance of wide bandgap semiconductor power devices as compared to advanced silicon devices.
Spring 2023
Instructors
Meeting Patterns
Classes Start:
January 9, 2023
Classes End:
April 24, 2023
Location:
01220 Engineering Building 2
Class Days:
T H
Class Start Time:
10:15am
Class End Time:
11:30am
Class Type:
Lecture
Credits:
3.00
Restrictions:
Restricted: ECE Graduate Students Only