Course Description
MOS capacitor and transistor regions of operation. Depletion and enhancement mode MOSFETs. MOSFET scaling, short and narrow channel effects. MOSFETs with ion-implanted channels. High field effects in MOSFETs with emphasis on recent advances in design of hit carrier suppressed structures. Small and large signal MOSFET models. State of the art in MOS process integration.
Fall 2022
Instructors
Meeting Patterns
Classes Start:
August 22, 2022
Classes End:
December 5, 2022
Location:
01227 Engineering Building 2
Class Days:
T H
Class Start Time:
10:15am
Class End Time:
11:30am
Class Type:
Lecture
Credits:
3.00
Restrictions:
Prerequisite: ECE graduate students and ECE undergrads with a 3.5 or higher GPA
